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M12L64164A-5BIG View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name
Description
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M12L64164A-5BIG
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
M12L64164A-5BIG Datasheet PDF : 45 Pages
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ESMT
10. Clock Suspend Exit & Power Down Exit
M12L64164A
Operation Temperature Condition -40°C~85°C
1)Cl ock Su sp en d (=Active Power Down )Exit
CLK
CKE
Internal
CLK
*Note1
CMD
tSS
RD
CLK
2)Power Down (=Precharge Power Down)
CKE
tSS
Internal
CLK
CMD
*Note2
NOP ACT
11. Auto Refresh & Self Refresh
1) Au to Re fr esh & Se lf R efr e sh *N ote3
CLK
*N ote4
CMD
PRE
AR
CKE
t RP
2 ) Sel f Re fr esh
CLK
CM D
*N ote4
PRE
* N ote6
SR
CKE
tRP
t RFC
*Note 5
CMD
CMD
tR F C
*Note :
1. Active power down : one or more banks active state.
2. Precharge power down : all banks precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after auto refresh command.
During tRFC from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, all banks must be idle state.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh entry, refresh interval and refresh operation are performed internally.
After self refresh entry, self refresh mode is kept while CKE is low.
During self refresh entry, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.
For the time interval of tRFC from self refresh exit command, any other command can not be accepted.
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2007
Revision: 1.2
23/45
 

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