M12L64164A View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name

Description

View to exact match

M12L64164A

1M x 16 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

M12L64164A

Read & Write Cycle at Different Bank @ Burst Length = 4

0

1

2

3

4

5

6

7

8

9

10 11 12 13

14 15 16

17 18 19

CLOCK

CKE

HIGH

CS

RAS

CAS

ADDR

RAa

CAa

RDb

CDb RBc

CBc

BA0

BA1

A10/AP

RAa

CL =2

DQ

CL =3

RBb

QAa0 QAa1 QAa2 QAa3

RAc

t *Note1

CDL

DDb0 Ddb1 DDb2 DDd3

QBc0 QBc1 QBc2

QAa0 QAa1 QAa2 QAa3

DDb0 Ddb1 DDb2 DDd3

QBc0 QBc1

WE

DQM

Row Active

(A-Bank)

Read

(A-Bank)

Precharge

(A-Bank)

Row Active

(D-Bank)

W rite

(D-Bank)

Row Active

(B-Bank)

Read

(B-Bank)

:Don't Care

*Note: 1. tCDL should be met to complete write.

Elite Semiconductor Memory Technology Inc.

Publication Date: May 2009

Revision: 3.4

34/45

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