M12L64164A View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

Part Name

Description

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M12L64164A

1M x 16 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

Self refresh entry command

( CS , RAS , CAS , CKE = Low , WE = High)

After the command execution, self refresh operation continues while CKE

remains low. When CKE goes to high, the M12L64164A exits the self refresh mode.

During self refresh mode, refresh interval and refresh operation are performed

internally, so there is no need for external control.

Before executing self refresh, all banks must be precharged.

M12L64164A

Burst stop command

( CS , WE = Low, RAS , CAS = High)

This command terminates the current burst operation.

Burst stop is valid at every burst length.

No operation

( CS = Low , RAS , CAS , WE = High)

This command is not a execution command. No operations begin or terminate by

this command.

Elite Semiconductor Memory Technology Inc.

Publication Date: May 2009

Revision: 3.4

15/45

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