PD85015S-E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

PD85015S-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

STMicroelectronics 

STAP85015-E STAP85015S-E

1

Electrical data

Electrical data

1.1

Maximum ratings

Table 2. Absolute maximum ratings (TCASE = 25 °C)

Symbol

Parameter

Value

Unit

V(BR)DSS

VGS

ID

PDISS

TJ

TSTG

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation (@ TC = 70 °C)

Max. operating junction temperature

Storage temperature

40

V

-0.5 to +15

V

5

A

59

W

165

°C

-65 to +150

°C

1.2

Thermal data

Table 3. Thermal data

Symbol

Parameter

RthJC

Junction - case thermal resistance

Value

1.6

Unit

°C/W

Doc ID 14466 Rev 2

3/13

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