PD20015TR-E View Datasheet(PDF) - STMicroelectronics
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Description
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PD20015TR-E
STMicroelectronics
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Electrical characteristics
2
Electrical characteristics
PD20015-E
2.1
2.2
TCASE = +25 °C
Static
Table 4. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 5 V
VDS = 10 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
VDS = 25 V
VDS = 0 V
ID = 350 mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
Min. Typ. Max. Unit
-
1 μA
-
1 μA
3.2
4.8 V
- 0.27 0.31 V
f = 1 MHz -
55
pF
f = 1 MHz -
40
pF
f = 1 MHz -
1.5
pF
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P3dB VDD = 13.6 V, IDQ = 350 mA
f = 2 GHz
23
GP
VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz
10 11
hD
VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz
45 53
Load VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz all
mismatch phase angles
20:1
-
W
-
dB
-
%
- VSWR
2.3
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
4/16
Doc ID 14005 Rev 4
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