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H07N60F View Datasheet(PDF) - Hi-Sincerity Microelectronics

Part NameDescriptionManufacturer
H07N60F N-Channel Power Field Effect Transistor Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
H07N60F Datasheet PDF : 5 Pages
1 2 3 4 5
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200604
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 2/5
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-220AB
1.7
TO-220FP
3.3
62
Units
OC/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125OC)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=3.5A)*
Forward Transconductance (VDS=15V, ID=3.5A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=300V, ID=7A, RG=9.1,
VGS=10V)*
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=480V, ID=7A, VGS=10V)*
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width 300us, Duty Cycle2%
Min. Typ. Max. Unit
600 -
-
V
-
-
1
uA
-
-
50 uA
-
- 100 nA
-
- -100 nA
2
3
4
V
-
1
1.2
2
-
-
S
- 1300 -
- 180 -
pF
-
35
-
-
14
-
-
19
-
ns
-
40
-
-
26
-
-
45 50
-
8.1
-
nC
- 14.1 -
-
4.5
-
nH
-
7.5
-
nH
Source-Drain Diode
Symbol
VSD
Forward On Voltage(1)
ton
Forward Turn-On Time
trr
Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=7A, VGS=0V, TJ=25oC
IS=7A, dIS/dt=100A/us
Min. Typ. Max. Units
-
-
1.3
V
-
**
-
ns
- 296 -
ns
H07N60E, H07N60F
HSMC Product Specification
Direct download click here
 

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