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H07N60F View Datasheet(PDF) - Hi-Sincerity Microelectronics

Part NameDescriptionManufacturer
H07N60F N-Channel Power Field Effect Transistor Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
H07N60F Datasheet PDF : 5 Pages
1 2 3 4 5
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200604
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 1/5
H07N60 Series
N-Channel Power Field Effect Transistor
Description
H07N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
D
1
Features
H07N60 Series
G
Symbol:
S
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
Parameter
ID
Drain to Current (Continuous)
IDM
Drain to Current (Pulsed)
VGS
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H07N60E (TO-220AB)
H07N60F (TO-220FP)
PD
Derate above 25OC
H07N60E (TO-220AB)
H07N60F (TO-220FP)
Tj
Operating Temperature Range
Tstg
Storage Temperature Range
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25OC
(VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25)
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Note: 1. VDD=50V, ID=10A
2. Pulse Width and frequency is limited by Tj(max) and thermal response
Value
7
28
±30
110
40
0.58
0.33
-55 to 150
-55 to 150
250
260
Units
A
A
V
W
W
W/°C
W/oC
OC
OC
mJ
°C
H07N60E, H07N60F
HSMC Product Specification
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