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IRL3705ZPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRL3705ZPBF
IR
International Rectifier IR
IRL3705ZPBF Datasheet PDF : 13 Pages
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IRL3705Z/S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
55 ––– –––
––– 0.055 –––
––– 6.5 8.0
––– ––– 11
––– ––– 12
1.0 ––– 3.0
150 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 40 60
––– 12 –––
––– 21 –––
––– 17 –––
––– 240 –––
––– 26 –––
––– 83 –––
––– 4.5 –––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e VGS = 10V, ID = 52A
e mVGS = 5.0V, ID = 43A
e VGS = 4.5V, ID = 30A
V VDS = VGS, ID = 250µA
V VDS = 25V, ID = 52A
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
ID = 43A
e nC VDS = 44V
VGS = 5.0V
VDD = 28V
ns ID = 43A
e RG = 4.3
VGS = 5.0V
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2880 –––
––– 420 –––
––– 220 –––
––– 1500 –––
––– 330 –––
––– 510 –––
and center of die contact
S
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
––– ––– 340
integral reverse
G
––– ––– 1.3
e p-n junction diode.
S
V TJ = 25°C, IS = 52A, VGS = 0V
––– 16
––– 7.4
24
11
e ns TJ = 25°C, IF = 43A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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