2SA1012Y View Datasheet(PDF) - Inchange Semiconductor
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2SA1012Y Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1012
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB=B -0.15A
ICBO
Collector Cutoff Current
VCB= -50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
hFE-2
DC Current Gain
IC= -3A ; VCE= -1V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -4V
COB
Output Capacitance
Switching Times
IE= 0; VCB= -10V; ftest= 1MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -3A ,RL= 10Ω,
IB1= -IB2= -0.15A,VCC= -30V
MIN TYP. MAX UNIT
-50
V
-0.4
V
-1.2
V
-1
μA
-1
μA
70
240
30
60
MHz
170
pF
0.1
μs
1.0
μs
0.1
μs
hFE-1 Classifications
O
Y
70-140 120-240
isc Website：www.iscsemi.cn
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