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BCX41 View Datasheet(PDF) - Infineon Technologies

Part NameBCX41 Infineon
Infineon Technologies Infineon
DescriptionNPN Silicon AF and Switching Transistors


BCX41 Datasheet PDF : 5 Pages
1 2 3 4 5
BCX41, BSS64
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSS64
BCX41
V(BR)CEO
80
-
125 -
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IB = 0
BSS64
120 -
-
BCX41
125 -
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
VCB = 100 V, IE = 0 , TA = 150 °C
BSS64
BCX41
BSS64
BCX41
V(BR)EBO 5
ICBO
-
-
ICBO
-
-
-
-
nA
- 100
- 100
µA
-
20
-
20
Emitter cutoff current
VEB = 4 V, IC = 0
Collector cutoff current
VCE = 100 V, TA = 85 °C
VCE = 100 V, TA = 125 °C
BCX41
BCX41
IEBO
ICEO
-
- 100 nA
µA
-
-
10
-
-
75
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 4 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 20 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
hFE
BCX41
BSS64
BSS64
BSS64
BSS64
BCX41
BCX41
25
-
-
60
20 80
-
80
-
55
63
-
40
-
-
-
-
-
-
-
-
-
1) Pulse test: t 300µs, D = 2%
2
Aug-20-2001
Direct download click here

• For general AF applications
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BCX42, BSS63 (PNP)

 

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