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EGP10F View Datasheet(PDF) - Silicon Standard Corp.

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EGP10F Datasheet PDF : 3 Pages
1 2 3
EGP10D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 oC ambient temperature unless otherwise specified.
Parameter
Symbol
EGP
10A
EGP
10B
EGP
10C
EGP
10D
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
Maximum DC blocking voltage
VDC
50
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55oC
IF(AV)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
Maximum instantaneous forward voltage at 1.0A
VF
Maximum DC reverse current
at rated DC blocking voltage
@TA=25oC
@TA=125oC
I
R
Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance at 4.0 V, 1 MHz
CJ
Typical thermal resistance (Note 1)
RθJA
Operating junction and storage temperature range
TJ, TSTG
100
150
200
70
105
140
100
150
200
1.0
30.0
0.95
5.0
100
50
22.0
50.0
-55 to +150
Notes: 1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length
2. Pulse test: 300us pulse width, 1% duty cycle
EGP
10F
300
210
300
EGP
10G
400
280
400
1.25
15.0
Unit
Volts
Volts
Volts
Amp
Amps
Volts
uA
nS
pF
oC/W
oC
07/11/2007 Rev.1.00
www.SiliconStandard.com
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