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SSF1020 データシートの表示(PDF) - GOOD-ARK

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SSF1020 100V N-Channel MOSFET GOOD-ARK
GOOD-ARK GOOD-ARK
SSF1020 Datasheet PDF : 5 Pages
1 2 3 4 5
SSF1020
100V N-Channel MOSFET
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 16mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =60A
BV=100V
RDS(ON)=16Typ.
DESCRIPTION
The SSF1020 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1020 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF1020 Top View (TO-220)
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
IDM
Pulsed drain current
Power dissipation
PD@TC=25ْC
Linear derating factor
VGS
Gate-to-Source voltage
EAS
Single pulse avalanche energy
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
60
50
240
180
2.0
±20
240
TBD
–55 to +175
Units
A
W
W/ْ C
V
mJ
ْC
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
Typ.
0.83
Max.
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BVDSS Drain-to-Source breakdown voltage
100 —
RDS(on) Static Drain-to-Source on-resistance
— 16
VGS(th)
Gate threshold voltage
2.0 3.0
gfs
Forward transconductance
— 58
IDSS
Drain-to-Source leakage current
——
——
Max. Units
Test Conditions
—V
VGS=0V,ID=250μA
20 mΩ
VGS=10V,ID=30A
4.0 V
VDS=VGS,ID=250μA
—S
VDS=5V,ID=30A
1
μA
VDS=100V,VGS=0V
10
VDS=100V, VGS=0V, TJ=150ْC
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