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IRFBA90N20DPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFBA90N20DPBF
IR
International Rectifier IR
IRFBA90N20DPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFBA90N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
––– –––
0.22 –––
––– 0.023
––– 5.0
––– 25
––– 250
––– 100
––– -100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 59A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
41 ––– ––– S VDS = 50V, ID = 59A
Qg
Total Gate Charge
––– 160 240
ID = 59A
Qgs
Gate-to-Source Charge
––– 45 67 nC VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
––– 75 110
VGS = 10V „
td(on)
Turn-On Delay Time
––– 23 –––
VDD = 100V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 160 ––– ns ID = 59A
––– 39 –––
RG = 1.2
––– 77 –––
VGS = 10V „
Ciss
Input Capacitance
––– 6080 –––
VGS = 0V
Coss
Output Capacitance
––– 1040 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 150 ––– pF ƒ = 1.0MHz
Coss
Output Capacitance
––– 7500 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Coss eff.
Output Capacitance
Effective Output Capacitance
––– 410 –––
––– 790 –––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
960
59
65
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 98
A showing the
––– ––– 390
integral reverse
G
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 59A, VGS = 0V „
––– 220 340 nS TJ = 25°C, IF = 59A
––– 1.9 2.8 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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