SF307D View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name

Description

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SF307D

30 Ampere Dual Doubler Polarity Fast Recovery Half Bridge Rectifiers

Thinki Semiconductor Co., Ltd. 

SF304D thru SF307D

®

SF304D/SF306D/SF307D

Pb

Pb Free Plating Product

30 Ampere Dual Doubler Polarity Fast Recovery Half Bridge Rectifiers

Features

Latest GPP technology with super fast recovery time

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters/Solar Inverters

Plating Power Supply,SMPS,Adapter and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: TO-247AD/TO-3P heatsink

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 5.6 gram approximately

TO-3P/TO-247AD

.142(3.6)

.125(3.2)

.640(16.25)

.620(15.75)

Unit : inch (mm)

.199(5.05)

.175(4.45)

.126(3.2)

.110(2.8)

.050(1.25)

.045(1.15)

.225(5.7)

.204(5.2)

.225(5.7)

.204(5.2)

.095(2.4)

.030(0.75)

.017(0.45)

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "C"

Suffix "A"

Suffix "D"

Suffix "S"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL SF304D

Maximum Recurrent Peak Reverse Voltage VRRM

200

Maximum RMS Voltage

VRMS

140

Maximum DC Blocking Voltage

VDC

200

Maximum Average Forward Rectified

Current TC=125oC

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

(JEDEC method)

Maximum Instantaneous Forward Voltage

VF

0.98

@ 15.0 A

Maximum DC Reverse Current @TJ=25oC

At Rated DC Blocking Voltage @TJ=125oC

IR

Maximum Reverse Recovery Time (Note 1) Trr

Typical junction Capacitance (Note 2)

CJ

Operating Junction and Storage

Temperature Range

TJ, TSTG

NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

SF306D

400

280

400

30.0

300

1.3

10

500

35-50

150

-55 to +150

SF307D UNIT

600

V

420

V

600

V

A

A

1.7

V

uA

uA

nS

pF

oC

Rev.05

© 2006 Thinki Semiconductor Co., Ltd.

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