IRFS654A View Datasheet(PDF) - Inchange Semiconductor
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IRFS654A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS654A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 6A
VGS= ±30V;VDS= 0
VDS= 250V; VGS= 0
VDS= 200V; VGS= 0; Tj= 125℃
IS= 12A; VGS= 0
MIN MAX UNIT
250
V
2
4
V
0.14
Ω
±100
nA
10
100
μA
1.5
V
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