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BD809 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
BD809
Iscsemi
Inchange Semiconductor Iscsemi
BD809 Datasheet PDF : 0 Pages
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD809
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=3 A;IB=0.3 A
VBE
Base-emitter voltage
IC=4A ; VCE=2V
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
MIN TYP. MAX UNIT
80
V
1.1
V
1.6
V
1.0
mA
2.0
mA
30
15
1.5
MHz
2
 

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