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BD809 View Datasheet(PDF) - Inchange Semiconductor

Part NameBD809 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistors
BD809 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD809
DESCRIPTION
·
·With TO-220C package
·Complement to type BD810
·DC current gain
: hFE = 30 (Min) @ IC = 2.0 Adc
APPLICATIONS
·Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
80
5
10
6
90
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
1.39
UNIT
/W
Direct download click here

DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

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