STD17N05L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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| STD17N05L Datasheet PDF : 0 Pages | |||
STD17N05L/STD17N06L
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2 .7 3
100
1. 5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
17
60
15
12
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA
VG S = 0
for STD17N05L
for STD17N06L
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 15 V
Min.
50
60
Typ. Max. Unit
V
V
250
µA
1000 µA
± 100 nA
ON (∗)
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 5 V ID = 8.5 A
R esist anc e
VGS = 5 V ID = 8.5 A Tc = 100 oC
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
1
17
Typ.
1.6
0. 06 5
Max.
2.5
0. 085
0. 17
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 8. 5 A
Min.
5
Typ.
12
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
700 1000 pF
250 350
pF
70
100
pF
2/10
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