datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

GE6679 View Datasheet(PDF) - E-Tech Electronics LTD

Part Name
Description
View to exact match
GE6679
ETL
E-Tech Electronics LTD ETL
GE6679 Datasheet PDF : 4 Pages
1 2 3 4
ISSUED DATE :2005/06/28
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
Gate Threshold Voltage
VGS(th) -1.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25 )
-
IDSS
Drain-Source Leakage Current(Tj=150 )
-
-
-0.03
-
34
-
-
-
-
-
-3.0
-
100
-1
-25
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-24A
nA VGS= 25V
uA VDS=-30V, VGS=0
uA VDS=-24V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
9
VGS=-10V, ID=-30A
m
-
15
VGS=-4.5V, ID=-24A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
-
42
67
ID=-16A
Qgs
-
6
-
nC VDS=-24V
Qgd
-
25
-
VGS=-4.5V
Td(on)
-
11
-
VDS=-15V
Tr
-
35
-
ID=-16A
ns VGS=-10V
Td(off)
-
58
-
RG=3.3
Tf
-
78
-
RD=0.94
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2870 4590
VGS=0V
-
960
-
pF VDS=-25V
-
740
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
47
43
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-24A, VGS=0V
ns IS=-16, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GE6679
Page: 2/4
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]