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EM636165TS-8 View Datasheet(PDF) - Etron Technology

Part Name
Description
View to exact match
EM636165TS-8
Etron
Etron Technology Etron
EM636165TS-8 Datasheet PDF : 75 Pages
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EtronTech
1M x 16 SDRAM
EM636165
Figure 12.3. Random Row Write (Interleaving Banks)
(Burst Length=8, CAS# Latency=3)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CL K
tCK3
CKE High
CS#
RAS#
CAS#
WE #
A11
A10
RAx
RBx
RAy
A0~A9
DQ M
RAx
CAx
tRCD
RBx
CBx
RAy
CAy
tW R*
tRP
tW R*
DQHi -Z
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2 DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3
Activate
Command
Bank A
W rite
Command
Bank A
* tWR > tWR(min.)
Activate
Command
Bank B
W rite
Command
Bank B
Precharge
Command
Bank A
Activate
Command
Bank A
W rite
Command
Bank A
Precharge
Command
Bank B
Preliminary
45
Rev. 2.7 Mar. 2006
 

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