datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

EM636165VE-8 View Datasheet(PDF) - Etron Technology

Part Name
Description
View to exact match
EM636165VE-8
Etron
Etron Technology Etron
EM636165VE-8 Datasheet PDF : 75 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
EtronTech
Ball Assignment (Top View)
1
2
3
4
5
6
7
A
VSS DQ15
DQ0 VDD
B
DQ14 VSSQ
VDDQ DQ1
C
DQ13 VDDQ
VSSQ DQ2
D
DQ12 DQ11
DQ4 DQ3
E
DQ10 VSSQ
VDDQ DQ5
F
DQ9 VDDQ
VSSQ DQ6
G
DQ 8
NC
H
NC
NC
J
NC UDQM
NC DQ7
NC
NC
LDQM WE#
K
NC
CLK
RAS# CAS#
L
CKE NC
M
A11
A9
N
A8
A7
NC
CS#
NC
NC
A0
A10
P
A6
A5
R
VSS
A4
A2
A1
A3
VDD
EM636165
Pin Assignment (Top View)
VDD
1
DQ0
2
DQ1
3
VSSQ
4
DQ2
5
DQ3
6
VDDQ
7
DQ4
8
DQ5
9
VSSQ
10
DQ6
11
DQ7
12
VDDQ
13
LDQM
14
WE# 15
CAS#
16
RAS#
17
CS#
18
A11
19
A10
20
A0
21
A1
22
A2
23
A3
24
VDD
25
50
Vss
49
DQ15
48
DQ14
47
VSSQ
46
DQ13
45
DQ12
44
VDDQ
43
DQ11
42
DQ10
41
VSSQ
40
DQ9
39
DQ8
38
VDDQ
37
NC
36
UDQM
35
CLK
34
CKE
33
NC
32
A9
31
A8
30
A7
29
A6
28
A5
27
A4
26
Vss
Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured
as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the
clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and
write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command
which is then followed by a Read or Write command.
The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst
termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at
the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a
programmable mode register, the system can choose the most suitable modes to maximize its performance. These
devices are well suited for applications requiring high memory bandwidth and particularly well suited to high
performance PC applications
Preliminary
2
Rev. 2.7 Mar. 2006
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]