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K2024-01 Просмотр технического описания (PDF) - Inchange Semiconductor

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K2024-01 N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
K2024-01 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2024-01
DESCRIPTION
·Drain Current ID= 3A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25
3
A
ID(puls)
Pulsed Drain Current
12
A
Ptot
Total Dissipation@TC=25
50
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 /W
Rth j-a Thermal Resistance, Junction to Ambient
35
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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