TIP142 View Datasheet(PDF) - Central Semiconductor
Part Name
Description
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TIP142 Datasheet PDF : 2 Pages
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TIP140 TIP141 TIP142 NPN
TIP145 TIP146 TIP147 PNP
SILICON POWER DARLINGTON
COMPLEMENTARY TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP140,
TIP145 series types are Complementary Silicon
Power Darlington Transistors manufactured by
the epitaxial base process, designed for general
purpose amplifier and low speed switching
applications where high gain is required.
TO-218 TRANSISTOR CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
TIP140 TIP141 TIP142
SYMBOL TIP145 TIP146 TIP147
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
60
80
100
60
80
100
5.0
10
20
0.5
125
-65 to +150
1.0
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=Rated VCBO
ICEO
VCE=1/2 Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=30mA (TIP140, TIP145)
60
BVCEO
IC=30mA (TIP141, TIP146)
80
BVCEO
IC=30mA (TIP142, TIP147)
100
VCE(SAT) IC=5.0A, IB=10mA
VCE(SAT) IC=10A, IB=40mA
VBE(ON) VCE=4.0V, IC=10A
VF
IF=10A
hFE
VCE=4.0V, IC=5.0A
1000
hFE
VCE=4.0V, IC=10A
500
ton
IC=10A, IB1=IB2=40mA, RL=3.0Ω
0.9
toff
IC=10A, IB1=IB2=40mA, RL=3.0Ω
4.0
MAX
1.0
2.0
2.0
2.0
3.0
3.0
2.8
UNITS
mA
mA
mA
V
V
V
V
V
V
V
μs
μs
R2 (1-August 2008)
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