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IRFP4332PBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRFP4332PBF
IR
International Rectifier IR
IRFP4332PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRFP4332PbF
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

RG
ƒ
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
-
Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
Reverse
-„ +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
*
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
Re-Applied
** + Voltage
Body Diode Forward Drop
ISD controlled by Duty Factor "D"
-
D.U.T. - Device Under Test
Inductor Curent
Ripple 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 19a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V
.2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 20a. Gate Charge Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6
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