datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

IRFP4332PBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP4332PBF PDF SWITCH IR
International Rectifier IR
IRFP4332PBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
0.40
ID = 35A
0.30
0.20
0.10
0.00
5
TJ = 125°C
TJ = 25°C
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFP4332PbF
1000
800
ID
TOP
8.3A
13A
BOTTOM 35A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
180
ton= 1µs
160
Duty cycle = 0.25
Half Sine Wave
140
Square Pulse
120
100
80
60
40
20
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
R3R3
Ri (°C/W) τι (sec)
τCτ 0.069565 0.000074
τ3 τ3
0.172464 0.001546
0.178261 0.019117
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
Direct download click here
 

Share Link : IR
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]