B12-28 View Datasheet(PDF) - Advanced Semiconductor
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B12-28 Datasheet PDF : 1 Pages
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B12-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The B12-28 is Designed for Class C Power
Amplifier Applications up to 250 MHz.
FEATURES:
• PG = 13 dB Typical at 12 W/175 MHz
• ∞ Load VSWR at Rated Conditions
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC
3.0 A
VCB
PDISS
TJ
TSTG
θJC
60 V
27 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +150 OC
6.5 OC/W
PACKAGE STYLE .380" 4L STUD
.112x45°
A
B
E
C
E
ØC
B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
M A X IM U M
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10801
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO
IC = 200 mA
BVCEO
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
IC = 500 mA
Cob
VCB = 30 V
f = 1.0 MHz
PG
VCC = 28 V
POUT = 12 W
ηc
f = 175 MHz
MINIMUM TYPICAL
60
35
4.0
20
10.8
13
50
60
MAXIM
250
200
30
UNITS
V
V
V
µA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.A
1/1
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