DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3433
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A)
RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A)
• Low Ciss: Ciss = 1500 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3433
TO-220AB
2SK3433-S
TO-262
2SK3433-ZJ
2SK3433-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±40
A
ID(pulse)
±80
A
Total Power Dissipation (TC = 25°C)
PT
47
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
21
A
EAS
44
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-262)
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14602EJ4V0DS00 (4th edition)
The mark 5 shows major revised points.
©
Date Published July 2002 NS CP(K)
Printed in Japan
1999, 2001