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TDA7851FH-QIX View Datasheet(PDF) - STMicroelectronics

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Description
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TDA7851FH-QIX
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TDA7851FH-QIX Datasheet PDF : 18 Pages
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TDA7851F
3
Electrical specifications
Electrical specifications
3.1
Absolute maximum ratings
Table 3. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VS
VS (DC)
VS (pk)
IO
Operating supply voltage
DC supply voltage
Peak supply voltage (for t = 50 ms)
Output peak current
Non repetitive (t = 100 μs)
Repetitive (duty cycle 10% at f = 10 Hz)
Ptot Power dissipation Tcase = 70 °C
Tj
Junction temperature
Tstg Storage temperature
18
V
28
V
50
V
10
A
9
A
85
W
150
°C
-55 to 150
°C
3.2
Electrical characteristics
Refer to the test and application diagram, VS = 14.4 V; RL = 4 Ω; Rg = 600 Ω; f = 1 kHz;
Tamb = 25 °C; unless otherwise specified.
Symbol
Table 4. Electrical characteristics
Parameter
Test condition
Min. Typ. Max. Unit
VS
Iq1
VOS
dVOS
Gv
dGv
Po
Po max.
Supply voltage range
-
Quiescent current
Output offset voltage
RL =
Play mode / Mute mode
During mute ON/OFF output offset
voltage
During standby ON/OFF output
offset voltage
ITU R-ARM weighted
see Figure 18
Voltage gain
-
Channel gain unbalance
-
Output power
Max. output power(1)
VS = 14.4 V; THD = 10%
VS = 14.4 V; THD = 1%
VS = 14.4 V; THD = 10%, 2 Ω
VS = 14.4 V; THD = 1%, 2 Ω
VS = 14.4 V; RL = 4 Ω
VS = 14.4 V; RL = 2 Ω
Vs = 15.2V; RL = 4 Ω (square
wave input (2 Vrms))
8
-
18
V
100 150 300 mA
-60
-
+60 mV
-10
-
+10 mV
-10
-
+10 mV
25 26 27 dB
±1 dB
25 28
W
-
22
W
48
W
-
-
38
W
45
75
-
-
W
48
DocID17714 Rev 4
7/18
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