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STQ1NC45R View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STQ1NC45R Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
STD2NC45-1, STQ1NC45R
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 0.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
STD2NC45-1
STQ1NC45R
450
450
± 50
1.5
0.5
0.95
0.315
6
2
30
3.1
0.24
0.025
3
-65 to 150
-65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
IPAK
4.1
100
275
TO-92
120
40
260
°C/W
°C/W
°C/W
°C
Max Value
Unit
IPAK
TO-92
1.5
A
25
mJ
2/11
 

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