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74HCT14D-Q100 View Datasheet(PDF) - NXP Semiconductors.

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Description
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74HCT14D-Q100
NXP
NXP Semiconductors. NXP
74HCT14D-Q100 Datasheet PDF : 20 Pages
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NXP Semiconductors
74HC14-Q100; 74HCT14-Q100
Hex inverting Schmitt trigger
11. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
Tamb = 25 C
Min Typ Max
74HC14-Q100
tpd
propagation delay nA to nY; see Figure 6
[1]
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 5.0 V; CL = 15 pF
-
VCC = 6.0 V
-
tt
transition time
see Figure 6
[2]
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
CPD
power dissipation per package; VI = GND to VCC [3] -
capacitance
74HCT14-Q100
tpd
propagation delay nA to nY; see Figure 6
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation per package;
capacitance
VI = GND to VCC 1.5 V
[1]
-
-
[2]
-
[3]
-
[1] tpd is the same as tPHL and tPLH.
[2] tt is the same as tTHL and tTLH.
[3] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of outputs.
41 125
15
25
12
-
12
21
19
75
7
15
6
13
7
-
20
34
17
-
7
15
8
-
Tamb = 40 C to Unit
+125 C
Max
Max
(85 C) (125 C)
155
190 ns
31
38 ns
-
- ns
26
32 ns
95
110 ns
19
22 ns
15
19 ns
-
- pF
43
51 ns
-
- ns
19
22 ns
-
- pF
74HC_HCT14_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 19 April 2013
© NXP B.V. 2013. All rights reserved.
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