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CPU165MF View Datasheet(PDF) - International Rectifier

Part Name
Description
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CPU165MF
IR
International Rectifier IR
CPU165MF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
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CPU165MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.62 — V/°C VGE = 0V, IC = 1.0mA
— 1.3 1.5
IC = 23A
VGE = 15V
— 1.7 — V IC = 42A
See Fig. 2, 5
— 1.4 —
IC = 23A, TJ = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -14 — mV/°C VCE = VGE, IC = 250µA
21 30 — S VCE = 100V, IC = 39A
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, TJ = 150°C
— 1.3 1.7 V IC = 25A
See Fig. 13
— 1.2 1.5
IC = 25A, TJ = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 84 100
IC = 39A
— 20 25 nC VCC = 400V
— 51 67
See Fig. 8
— 24 —
TJ = 25°C
— 50 — ns IC = 39A, VCC = 480V
— 270 540
VGE = 15V, RG = 5.0
— 210 360
Energy losses include "tail" and
— 1.1 —
diode reverse recovery
— 2.1 — mJ See Fig. 9, 10, 11, 18
— 3.2 5.4
— 25 —
TJ = 150°C, See Fig. 9, 10, 11, 18
— 49 —
— 440 —
ns IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
— 410 —
Energy losses include "tail" and
— 5.8 — mJ diode reverse recovery
— 3000 —
VGE = 0V
— 340 — pF VCC = 30V
See Fig. 7
— 40 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C See Fig.
— 105 160
TJ = 125°C
14
IF = 25A
— 4.5 10 A TJ = 25°C See Fig.
— 8.0 15
TJ = 125°C
15
VR = 200V
— 112 375 nC TJ = 25°C See Fig.
— 420 1200
TJ = 125°C
16
di/dt = 200A/µs
— 250 — A/µs TJ = 25°C See Fig.
— 160 —
TJ = 125°C 17
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
C-134
Pulse width 5.0µs,
single shot.
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