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BDX53 View Datasheet(PDF) - Continental Device India Limited

Part Name
Description
View to exact match
BDX53
CDIL
Continental Device India Limited CDIL
BDX53 Datasheet PDF : 3 Pages
1 2 3
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
Collector current
Collector current (Peak value)
Base current
Total power dissipation upto TC=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCB = 45 V
IB = 0; VCB = 60 V
IB = 0; VCB = 80 V
IB = 0; VCB = 100 V
IB = 0; VCE = 22 V
IB = 0; VCE = 30 V
IB = 0; VCE = 40 V
IB = 0; VCE = 50 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3 A; IB = 12 mA
D.C. current gain
IC = 3 A; VCE = 3 V
Small signal current gain
IC = 3 A; VCE = 4 V; f = 1.0 MHz
Output capacitance f = 1.0 MHz
IE = 0; VCB = 10 V
NPN
PNP
Parallel-diode forward voltage
IF = 3 A
IF = 8 A
IC
max.
ICM
max.
IB
max.
Ptot
max.
max.
Tj
max.
Tstg
Rth j–c
Rth j–a
8.0
A
12
A
0.2
A
60
W
0.48
W/°C
150
°C
–65 to +150 ºC
2.08
°C/W
7.0
°C/W
53 53A 53B 53C
54 54A 54B 54C
ICBO
ICBO
ICBO
ICBO
ICEO
ICEO
ICEO
ICEO
max. 0.2 – – – mA
max. – 0.2 – – mA
max. – – 0.2 – mA
max. – – – 0.2 mA
max. 0.5 – – – mA
max. – 0.5 – – mA
max. – – 0.5 – mA
max. – – – 0.5 mA
IEBO
max.
2.0
mA
VCEO(sus)* min. 45
VCBO
min. 45
VEBO
min.
60 80 100 V
60 80 100 V
5.0
V
VCEsat* max.
2.0
V
VBEsat* max.
2.5
V
hFE*
min.
750
|hfe|
min.
4.0
Co
max.
300
pF
Co
max.
200
pF
VF
max.
2.5
V
VF
typ.
2.5
V
* Pulse test: pulse width 300 µs; duty cycle 2%
Continental Device India Limited
Data Sheet
Page 2 of 3
 

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