74AHC1G08GV-Q100 View Datasheet(PDF) - NXP Semiconductors.
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74AHC1G08GV-Q100 Datasheet PDF : 12 Pages
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NXP Semiconductors
74AHC1G08-Q100; 74AHCT1G08-Q100
2-input AND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions
ICC
ICC
CI
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
additional
per input pin; VI = 3.4 V;
supply current other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
input
capacitance
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min
Max
Min
Max
-
- 1.0
-
10
-
40 A
-
- 1.35 -
1.5
-
1.5 mA
- 1.5 10
-
10
-
10 pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf = 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
For type 74AHC1G08-Q100
tpd
propagation A and B to Y;
[1]
delay
see Figure 5
VCC = 3.0 V to 3.6 V [2]
CL = 15 pF
- 4.6 8.8 1.0
10.5
1.0
12.0 ns
CL = 50 pF
- 6.5 12.3 1.0
14.0
1.0
16.0 ns
VCC = 4.5 V to 5.5 V [3]
CL = 15 pF
- 3.2 5.9 1.0
7.0
1.0
8.0 ns
CL = 50 pF
- 4.6 7.9 1.0
9.0
1.0
10.5 ns
CPD
power
per buffer;
[4] -
17
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
For type 74AHCT1G08-Q100
tpd
propagation A and B to Y;
[1]
delay
see Figure 5
VCC = 4.5 V to 5.5 V [3]
CL = 15 pF
- 3.6 6.2 1.0
7.1
1.0
8.0 ns
CL = 50 pF
- 5.1 7.9 1.0
9.0
1.0
10.5 ns
CPD
power
per buffer;
[4] -
19
-
-
-
-
-
pF
dissipation CL = 50 pF; f = 1 MHz;
capacitance VI = GND to VCC
[1] tpd is the same as tPLH and tPHL.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
74AHC_AHCT1G08_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 July 2012
© NXP B.V. 2012. All rights reserved.
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