K3092 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

View to exact match

K3092

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK3092

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

Conditions

PW≤10µs, duty cycle≤1%

Tc=25°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Sourse Leakage Current

Cutoff Voltage

Forward Transfer Admittance

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

Static Drain-to-Source On-State Resistance RDS(on)

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Turn-ON Delay Time

td(on)

Rise Time

Turn-OFF Delay Time

tr

td(off)

Fall Time

Diode Forward Voltage

tf

VSD

Marking : K3092

ID=1mA, VGS=0

VDS=320V, VGS=0

VGS=±30V, VDS=0

VDS=10V, ID=1mA

VDS=10V, ID=1.5A

ID=1.5A, VGS=15V

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=200V, VGS=10V, ID=3A

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=3A, VGS=0

Switching Time Test Circuit

PW=1µs

D.C.≤0.5%

VGS=15V

VDD=200V

ID=1.5A

RL=133Ω

D

VOUT

G

P.G

RGS

2SK3092

50Ω

S

Ratings

Unit

400

V

±30

V

3

A

12

A

1.0

W

30

W

150

°C

--55 to +150

°C

Ratings

Unit

min

typ

max

400

V

1.0 mA

±100 nA

3.0

4.0

V

0.7

1.4

S

1.8

2.3

Ω

360

pF

90

pF

45

pF

10

nC

10

ns

10

ns

28

ns

17

ns

0.85

1.2

V

ID -- VDS

7

10V

6

15V

5

8V

4

3

7V

2

1

VGS=6V

0

0

10

20

30

Drain-to-Source Voltage, VDS -- V IT01967

6

VDS=10V

5

4

3

ID -- VGS

25°C

75°C

2

1

0

0

5

10

15

20

Gate-to-Source Voltage, VGS -- V IT01968

No.6788-2/4

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