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PTFA192401E View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ? 1990 MHz Infineon
Infineon Technologies Infineon
PTFA192401E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
1900
1930
1960
1990
2020
G
S
Z Source
R
jX
8.43
–8.22
8.00
–7.86
7.57
–7.51
7.19
–7.17
6.86
–6.77
Z Load
R
jX
0.80
3.26
0.78
3.56
0.76
3.84
0.73
4.12
0.72
4.38
Data Sheet
6 of 11
PTFA192401E
PTFA192401F
Z Load
2020 MHz
1900 MHz
Z0 = 50
Z Source
0.1
2020 MHz
1900 MHz
0. 2
Rev. 02, 2009-04-01
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