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PTFA192401E View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
PTFA192401E Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ? 1990 MHz Infineon
Infineon Technologies Infineon
PTFA192401E Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
1
52 dBm
0.1 51.0 dBm
0.01
50 dBm
48 dBm
46 dBm
Input
0.001
1
2
3
4
5
6
7
8
Peak-to-Average (dB)
PTFA192401E
PTFA192401F
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz
18
17 -15C
25C
16
15 85C
14
13
12
1
10
100
Output Power (W)
1000
Two-tone Drive-up
VDD = 30 V, IDQ = 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-25
45
-30
40
-35
IM3
-40
-45
-50 IM5
-55
35
Efficiency
30
25
20
-60
IM7
15
-65
42
44 46 48 50 52 54
Output Power, PEP (dBm)
10
56
Voltage Sweep
IDQ = 1600 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10
50
-20
IM3 Up
-30
Efficiency 40
30
-40
-50
23
20
Gain
10
25
27
29
31
33
Supply Voltage (V)
Data Sheet
5 of 11
Rev. 02, 2009-04-01
Direct download click here

 

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