PTFA192401EV4 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
PTFA192401EV4
Infineon Technologies
PTFA192401EV4 Datasheet PDF : 11 Pages
| |||
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Gps
15
16
—
Drain Efficiency
ηD
25
27
—
Intermodulation Distortion
IMD
—
–36
–34
Unit
dB
%
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps
—
15.8
ηD
—
40
IMD
—
–28
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.6 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 50 W WCDMA)
Data Sheet
Symbol
VDSS
VGS
TJ
PD
2 of 11
TSTG
RθJC
Min Typ
65
—
—
—
—
—
—
0.03
2.0
2.5
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Value
65
–0.5 to +12
Unit
V
V
200
°C
761
W
4.35
–40 to +150
W/°C
°C
0.23
°C/W
Rev. 02, 2009-04-01
|
|
Share Link: