PTFA192401EV4 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

PTFA192401EV4

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz

Infineon Technologies 

Confidential, Limited Internal Distribution

Package Outline Specifications (cont.)

Package H-37260-2

PTFA192401E

PTFA192401F

C66065-A2325-C001-01-0027

Diagram Notes—unless otherwise specified:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Pins: D = drain, S = source, G = gate.

3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

4. Gold plating thickness:

S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]

5. All tolerances ± 0.127 [.005] unless specified otherwise.

6. Primary dimensions are mm. Alternate dimensions are inches.

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/rfpower

Data Sheet

10 of 11

Rev. 02, 2009-04-01

Share Link: