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K11A60D Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K11A60D Silicon N Channel MOS Type (?-MOS VII) Field Effect Transistor Toshiba
Toshiba Toshiba
K11A60D Datasheet PDF : 6 Pages
1 2 3 4 5 6
RDS (ON) – Tc
2.5
COMMON SOURCE
VGS = 10 V
PULSE TEST
2.0
1.5
ID = 11A
5.5A
1.0
2.8A
0.5
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK11A60D
IDR – VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
0.1
0
10
5
3
1
VGS = 0, 1 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
100
CAPACITANCE – VDS
Ciss
Coss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Tc
5
4
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
80
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
16
300
12
VDD = 100 V
400
200
8
200 COMMON SOURCE
ID = 11 A
100
VGS
Tc = 25°C
4
PULSE TEST
0
0
0
10
20
30
40
50
TOTAL GATE CHARGE Qg (nC)
4
2010-08-12
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