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K11A60D Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K11A60D Silicon N Channel MOS Type (?-MOS VII) Field Effect Transistor Toshiba
Toshiba Toshiba
K11A60D Datasheet PDF : 6 Pages
1 2 3 4 5 6
Electrical Characteristics (Ta = 25°C)
TK11A60D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5.5 A
VDS = 10 V, ID = 5.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
±1
μA
10
μA
600
V
2.0
4.0
V
0.54 0.65 Ω
1.5 6.0
S
1550
7
pF
165
tr
10 V
VGS
0V
ID = 5.5 A VOUT
25
ton
50 Ω
RL = 36 Ω
60
ns
tf
15
VDD 200 V
toff
Duty 1%, tw = 10 μs
110
Qg
Qgs
VDD 400 V, VGS = 10 V, ID = 11 A
28
18
nC
Qgd
10
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 11 A, VGS = 0 V
IDR = 11 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
11
A
44
A
1.7
V
1300
ns
13
μC
Marking
K11A60D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to
Lot No.
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
Note 4
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-08-12
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