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J604 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
View to exact match
J604
Renesas
Renesas Electronics Renesas
J604 Datasheet PDF : 0 Pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ604
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ604 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
Super low on-state resistance:
RDS(on)1 = 30 mMAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 43 mMAX. (VGS = 4.0 V, ID = 23 A)
Low input capacitance:
Ciss = 3300 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT
m 20
m 45
m 120
70
Total Power Dissipation (TA = 25°C)
PT
1.5
Channel Temperature
Tch
150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS
35
EAS
123
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ604
TO-220AB
2SJ604-S
TO-262
2SJ604-ZJ
2SJ604-Z
TO-263
TO-220SMD Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W
(TO-262)
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14649EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
2000, 2001
 

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