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KTD1824A View Datasheet(PDF) - KEC

Part Name
Description
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KTD1824A Datasheet PDF : 0 Pages
SEMICONDUCTOR
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
USM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature Range
Tstg
RATING
50
40
15
50
100
100
150
-55150
UNIT
V
V
V
mA
mW
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
E
M
B
M
2
1
N
K
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
3
C
0.90 +_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
H
M
0.70
0.42+_ 0.10
N
0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
L
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
ICEO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE (Note)
VCE(sat)
VCB=20V, IE=0
VCE=20V, IB=0
IC=10A, IE=0
IC=1mA, IB=0
IE=10A, IC=0
VCE=10V, IC=2mA
IC=10mA, IB=1mA
Transition Frequency
Note : hFE Classification
fT
VCB=10V, IE=-2mA, f=200MHz
A:400~800, B:600~1200, C:1000~2000
MIN.
-
-
50
40
15
400
-
-
TYP.
-
-
1000
0.05
120
MAX.
100
1
2000
0.2
-
UNIT
nA
A
V
V
V
V
MHz
2001. 11. 29
Revision No : 1
1/3
 

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