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B11NM60 View Datasheet(PDF) - STMicroelectronics

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B11NM60 Datasheet PDF : 16 Pages
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Electrical characteristics
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA, VGS= 0
VDS = 600 V
VDS = 600 V, Tc=125°C
VGS = ±30V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 5.5A
Min. Typ. Max. Unit
600
V
1 µA
10 µA
±100 nA
3
4
5
V
0.4 0.45
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 5.5A
5.2
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
1000
230
25
pF
pF
pF
Coss eq Equivalent output
(2) capacitance
VGS=0, VDS =0V to 480V
100
pF
f=1 MHz gate DC bias = 0
RG Gate input resistance
Test signal level = 20mV
open drain
1.6
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480V, ID = 11A
VGS =10V
(see Figure 15)
30
nC
10
nC
15
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
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