FQP20N60/FQPF20N60
600V,20A N-Channel MOSFET
General Description
Product Summary
The FQP20N60 & FQPF20N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
700V@150℃
20A
< 0.37Ω
Top View
D
TO-220
TO-220F
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AFQOPT20N60
FQPF20N60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
20
20*
12
12*
80
6.5
630
1260
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
417
3.3
50
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP20N60
65
0.5
FQPF20N60
65
--
Maximum Junction-to-Case
RθJC
0.3
2.5
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
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