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FCB20N60_F085 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FCB20N60_F085
Fairchild
Fairchild Semiconductor Fairchild
FCB20N60_F085 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Typical Characteristics
100
10
100us
1
OPERATION IN THIS
1ms
AREA MAY BE
LIMITED BY rDS(on)
0.1
SINGLE PULSE
10ms
100ms
TJ = MAX RATED
TC = 25oC
0.01
1
10
100
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
100
VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Forward Diode Characteristics
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 20V
TJ = 150oC
10
TJ = -55oC
TJ = 25oC
1
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
100
10
VGS
15V Top
10V
8V
7V
6.5V
6V
5.5V Bottom
5.5V
80μs PULSE WIDTH
TJ = 25 oC
1
0.1
1
10 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
100
10
VGS
15V Top
10V
8V
7V
6.5V
6V
5.5V Bottom
5.5V
80μs PULSE WIDTH
TJ = 150 oC
1
0.1
1
10 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
1000
800
ID = 20A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
600
TJ = 150oC
400
TJ = 25oC
200
0
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Rdson vs Gate Voltage
FCB20N60_F085 Rev. C1
4
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