MC68HC908RF2 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

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MC68HC908RF2

HCMOS Microcontroller Unit

Motorola => Freescale 

FLASH 2TS Memory

BLK1 — Block Erase Control Bit

This read/write bit together with BLK0 allows erasing of blocks of

varying size. See 4.6 FLASH 2TS Erase Operation for a description

of available block sizes.

BLK0 — Block Erase Control Bit

This read/write bit together with BLK1 allows erasing of blocks of

varying size. See 4.6 FLASH 2TS Erase Operation for a description

of available block sizes.

HVEN — High-Voltage Enable Bit

This read/write bit enables the charge pump to drive high voltages for

program and erase operations in the array. HVEN can be set only if

either PGM = 1 or ERASE = 1 and the proper sequence for smart

programming or erase is followed.

1 = High voltage enabled to array and charge pump on

0 = High voltage disabled to array and charge pump off

MARGIN — Margin Read Control Bit

This read/write bit configures the memory for margin read operation.

MARGIN cannot be set if the HVEN = 1. MARGIN will automatically

return to unset (0) if asserted when HVEN = 1.

1 = Margin read operation selected

0 = Margin read operation unselected

ERASE — Erase Control Bit

This read/write bit configures the memory for erase operation.

ERASE is interlocked with the PGM bit such that both bits cannot be

set at the same time.

1 = Erase operation selected

0 = Erase operation unselected

PGM — Program Control Bit

This read/write bit configures the memory for program operation.

PGM is interlocked with the ERASE bit such that both bits cannot be

set at the same time.

1 = Program operation selected

0 = Program operation unselected

Advance Information

48

FLASH 2TS Memory

MC68HC908RF2 — Rev. 1

MOTOROLA

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