datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FQD13N10LTF View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQD13N10LTF
Fairchild
Fairchild Semiconductor Fairchild
FQD13N10LTF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
FQD13N10L / FQU13N10L
N-Channel QFET® MOSFET
100 V, 10 A, 180 m
July 2013
Description
Features
This N-Channel enhancement mode power MOSFET is 10 A, 60 V, RDS(on) = 180 m(Max) @VGS = 10 V,
produced using Fairchild Semiconductor®’s proprietary
ID = 5.0 A
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce • Low Gate Charge (Typ. 8.7 nC)
on-state resistance, and to provide superior switching • Low Crss (Typ. 20 pF)
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, • 100% Avalanche Tested
audio amplifier, DC motor control, and variable switching Low level gate drive requirements allowing direct
power applications.
operation form logic drivers
D
G
S
D-PAK
(TO252)
G DS
I-PAK
(TO251)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQD13N10L / FQU13N10L
100
10
6.3
40
± 20
95
10
4.0
6.0
2.5
40
0.32
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max. *
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor Corporation
FQD13N10L / FQU13N10L Rev. C2
FQD13N10L / FQU13N10L
3.13
50
110
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]