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Y100N10E Ver la hoja de datos (PDF) - ON Semiconductor

Número de piezaY100N10E ON-Semiconductor
ON Semiconductor ON-Semiconductor
componentes DescripciónPower MOSFET 100 Amps, 100 Volts
Y100N10E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MTY100N10E
PACKAGE DIMENSIONS
TO264
CASE 340G02
ISSUE H
B
N
R
Y
123
0.25 (0.010) M T B M
Q
U
T
C
E
A
L
P
K
F 2 PL
W
G
J
D 3 PL
H
0.25 (0.010) M Y Q S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 28.0 29.0 1.102 1.142
B 19.3 20.3 0.760 0.800
C
4.7
5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E
1.9
2.1 0.075 0.083
F
2.2
2.4 0.087 0.102
G
5.45 BSC
0.215 BSC
H
2.6
3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.0 11.4 0.433 0.449
N 3.95 4.75 0.156 0.187
P
2.2
2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.15 2.35 0.085 0.093
U
6.1
6.5 0.240 0.256
W 2.8 3.2 0.110 0.125
STYLE 1:
PIN 1.
2.
3.
GATE
DRAIN
SOURCE
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MTY100N10E/D
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Power MOSFET 100 Amps, 100 Volts
N−Channel TO−264

This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

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