IRFW/I740A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
400 -- -- V
-- 0.50 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=400V
VDS=320V,TC=125
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
-- -- 0.55 Ω VGS=10V,ID=5A
(4)
-- 7.78 --
VDS=50V,ID=5A
(4)
-- 1180 1530
-- 175 205 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 80 95
-- 18 50
-- 21 55
VDD=200V,ID=10A,
-- 78 170 ns RG=9.1Ω
See Fig 13 (4) (5)
-- 28 65
-- 58 75
-- 8.1 --
-- 31.3 --
VDS=320V,VGS=10V,
nC ID=10A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 10
-- 40
Integral reverse pn-diode
A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=10A,VGS=0V
-- 315 -- ns TJ=25°C,IF=10A
-- 2.84 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=8mH, IAS=10A, VDD=50V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 10A, di/dt ≤ 170A/µs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature