datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

IRFW740A View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFW740A Advanced Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFW740A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
$GYDQFHG 3RZHU 026)(7
IRFW/I740A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 400V
Lower RDS(ON): 0.437(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 400 V
RDS(on) = 0.55
ID = 10 A
D2-PAK I2-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
400
10
6.3
40
±30
457
10
13.4
4.0
3.1
134
1.08
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
0.93
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
Direct download click here
 

Share Link : Fairchild
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]